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VLSI Korea

Semiconductor graph

HBM3e
Methods ↗

3 entities and 2 documented connections shown.

Connections

3 entities · 2 claims
100%

Drag the map or use pan buttons to move. Tab to a node or connection and press Enter to inspect its evidence. Arrows follow the actual claim direction.

STARTING ENTITYDIRECT CONNECTIONSUses memory technology · SUPPORTEDUses memory technologyUses memory technology · SUPPORTEDUses memory technologyHBM3e · memory technologyMEMORY TECHNOLOGYSTARTHBM3eMicron HBM3E 24GB 8H · productPRODUCTMicron HBM3E 24GB 8HSK hynix 12-layer HBM3E · productPRODUCTSK hynix 12-layerHBM3E
CompanyChip / productTechnologyPlace / facility
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Relationships & evidence (2)
Every displayed connection is a scoped claim. Arrows follow subject to object.
SubjectRelationshipObjectStatusEvidence
SK hynix 12-layer HBM3EHBM3eSUPPORTEDSource-reported snapshot: 2024-09-26
Why are these connected?

Named HBM3E product.

Full claim history →
Micron HBM3E 24GB 8HHBM3eSUPPORTEDSource-reported snapshot: 2024-02-26
Why are these connected?

Named HBM3E product.

Full claim history →
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From HBM3e · up to two relationship steps.

A path retains its original claims. Shared technology does not establish a supply contract.

3 nodes · 2 claims
Scope

Relationships may describe different dates. A path does not establish simultaneous activity. Bounded source-backed collection. Missing or filtered connections do not establish absence. Supported does not mean independently verified.